TOKYO — NEC Corp. has developed a nitride semiconductor power transistor capable of 2.3-watt power amplification in the 30-GHz sub-millimeter band. The Japanese company claims this is a major advance ...

While it is often overlooked, the steady evolution of the power transistor has played a key role in the successful development of a wide variety of applications from avionics and radar systems to ...

Unpacking the challenges with high-voltage power conversion and how SiC fits in. The pivotal advantages of SiC over traditional silicon in next-gen power converters. Rethinking circuit design for ...

Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...

Properties of wide-bandgap materials, with a focus on SiC. How a bridgeless totem-pole topology can help cut losses. A breakdown of the half-bridge inverter topology The efficiency of power-conversion ...

The chipmaker will shed light on a series of changes it's making to transistors that ideally will keep a lid on the growing problem of power consumption. Michael Kanellos is editor at large at CNET ...

Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high reliability ...

Researchers have succeeded in developing a simple hydrocarbon molecule with a logic gate function, similar to that in transistors, in a single molecule. The discovery could make electric components on ...

This whitepaper gives a compact overview of the recommended gate drive concepts for both GIT (gate injection transistor) and SGT (Schottky gate transistor) product families. A versatile standard drive ...

While 5G applications are proliferating everywhere, the industry continues to face a myriad of challenges implementing the technology. One of them has been the performance limitations of ...