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Abstract: The adoption of double-sided cooled (DSC) module packaging remains limited by fabrication complexity, despite its promise for high-power silicon carbide (SiC) applications. This work ...
Abstract: Medium-voltage SiC MOSFETs (> 3.3 kV) feature high breakdown voltage and fast switching speed. During the turn-on transient of 10 kV SiC MOSFETs, drain-source voltage drops from 6000 V ...
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